DocumentCode
689474
Title
Enhanced Terahertz generation from InGaN/GaN dot-in-a-wire light emitting diodes
Author
Guan Sun ; Ruolin Chen ; Ding, Yujie J. ; Nguyen, H.P.T. ; Zetian Mi
Author_Institution
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
Efficient Terahertz output is generated from InGaN/GaN dot-in-a-wire light emitting diodes (LEDs) grown on Si(111). Under reverse bias, the THz output power is enhanced more than 4 times.
Keywords
III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; light emitting diodes; microwave photonics; nanowires; semiconductor quantum dots; silicon; terahertz wave generation; InGaN-GaN; LED; Si; Si(111); THz output power; dot-in-a-wire light emitting diodes; enhanced terahertz generation; reverse bias; Electric fields; Gallium nitride; Laser beams; Light emitting diodes; Power generation; Quantum dots; Wires;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6833858
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