Title :
Enhanced Terahertz generation from InGaN/GaN dot-in-a-wire light emitting diodes
Author :
Guan Sun ; Ruolin Chen ; Ding, Yujie J. ; Nguyen, H.P.T. ; Zetian Mi
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Efficient Terahertz output is generated from InGaN/GaN dot-in-a-wire light emitting diodes (LEDs) grown on Si(111). Under reverse bias, the THz output power is enhanced more than 4 times.
Keywords :
III-V semiconductors; elemental semiconductors; gallium compounds; indium compounds; light emitting diodes; microwave photonics; nanowires; semiconductor quantum dots; silicon; terahertz wave generation; InGaN-GaN; LED; Si; Si(111); THz output power; dot-in-a-wire light emitting diodes; enhanced terahertz generation; reverse bias; Electric fields; Gallium nitride; Laser beams; Light emitting diodes; Power generation; Quantum dots; Wires;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
