DocumentCode :
68953
Title :
A New Method to Determine Avalanche Multiplication Factor Using Vector Network Analyzer for p-n Junctions
Author :
Chie-In Lee ; Wei-Cheng Lin ; Yan-Ting Lin
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-Sen Univ., Kaohsiung, Taiwan
Volume :
24
Issue :
9
fYear :
2014
fDate :
Sept. 2014
Firstpage :
646
Lastpage :
648
Abstract :
In this letter, a new and simple radio-frequency (RF) -based method with dead-space-based theory considered for mixed avalanche and tunneling mechanisms is presented to determine the pure avalanche multiplication factor up to near 1 MV/cm for the first time. By extracting the equivalent circuit parameters based on a vector network analyzer, the avalanche multiplication factor can be determined and can be distinguished from the tunneling multiplication factor. The saturated avalanche multiplication factor with increased electric field is observed at high field. This saturated phenomenon obtained from experimental data is the first reported result for the two-terminal p-n junction. The validity of the obtained avalanche multiplication factor is verified by the dead-space-based theory. The proposed alternative avalanche multiplication factor extraction can be applied to breakdown characterization for the state-of-the-art device such as impact-ionization metal-oxide semiconductor (I-MOS) transistor and tunnel devices.
Keywords :
avalanche breakdown; avalanche diodes; elemental semiconductors; equivalent circuits; network analysers; p-n junctions; silicon; tunnelling; I-MOS transistor; RF-based method; Si; avalanche diode; avalanche multiplication factor; breakdown characterization; dead-space-based theory; electric field; equivalent circuit parameter extraction; impact-ionization metal-oxide semiconductor transistor; radiofrequency-based method; saturated avalanche multiplication factor; tunnel device; tunneling multiplication factor; two-terminal p-n junction; vector network analyzer; Electric breakdown; P-n junctions; Radio frequency; Semiconductor diodes; Substrates; Tunneling; Avalanche multiplication factor; high-breakdown; p-n junction; vector network analyzer (VNA);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2014.2330500
Filename :
6843367
Link To Document :
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