Title :
Spontaneous and induced optical absorption in ultra-low loss amorphous Ta2O5 and SiO2 dielectric thin films
Author :
Markosyan, A.S. ; Route, R. ; Fejer, M.M. ; Patel, Dinesh ; Menoni, C.S.
Author_Institution :
Dept. of Appl. Phys., Stanford Univ., Stanford, CA, USA
Abstract :
The optical absorption @1064 nm in Ta2O5 and SiO2 thin films is affected with simultaneous illumination ranging from 266 to 780 nm. The effect is attributed to filling of trap states in the forbidden gap.
Keywords :
absorption coefficients; amorphous state; dielectric thin films; energy gap; optical films; optical losses; optical materials; silicon compounds; tantalum compounds; SiO2; Ta2O5; forbidden gap; induced optical absorption; simultaneous illumination; spontaneous optical absorption; trap state filling; ultralow loss amorphous SiO2 dielectric thin films; ultralow loss amorphous Ta2O5 dielectric thin films; wavelength 1064 nm; wavelength 266 nm to 780 nm; Absorption; Educational institutions; Laser beams; Laser excitation; Optical films; Optical interferometry; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
