DocumentCode
689737
Title
Investigation of nano-sized hole/post patterned sapphire substrates-induced strain-related quantum-confined stark effect of InGaN-based light-emitting diodes
Author
Su, Vincent ; Po-Hsun Chen ; Ming-Lun Lee ; Yao-Hong You ; Cheng-Ju Hsieh ; Chieh-Hsiung Kuan ; Yi-Chi Chen ; Hung-Chou Lin ; Han-Bo Yang ; Ray-Ming Lin ; Quan-Yi Lee ; Fu-Chuan Chu
Author_Institution
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
fYear
2013
fDate
9-14 June 2013
Firstpage
1
Lastpage
2
Abstract
This paper demonstrates that the efficiency of InGaN-based light-emitting diodes with nano-post patterned sapphire substrates is superior to that with nano-hole patterned sapphire substrates under the same nano-scale feature owing to reduced quantum-confined stark effect.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanopatterning; nanophotonics; quantum confined Stark effect; sapphire; substrates; Al2O3; InGaN; InGaN-based light-emitting diodes; nanohole patterned sapphire substrates; nanosized hole; post patterned sapphire substrates; strain-related quantum-confined Stark effect; Density measurement; Gallium nitride; Light emitting diodes; Quantum well devices; Stark effect; Strain; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location
San Jose, CA
Type
conf
Filename
6834124
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