Title :
The crystalline and optical properties of (1122) semipolar GaN and InGaN/GaN MQWs on (1100) M-sapphire
Author :
Yun-Jing Li ; Shih-Pang Chang ; Kuok-Pan Sou ; Jet-Rung Chang ; Ruey-Wen Chang ; Chun-Yen Chang ; Yuh-Jen Cheng
Author_Institution :
Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
We report the growth temperature effect on the crystalline and optical properties of (112̅2) semipolar GaN and InGaN/GaN MQWs. It shows that a lower growth temperature at 1020 °C produces better crystalline and optical properties.
Keywords :
III-V semiconductors; electroluminescence; gallium compounds; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum wells; wide band gap semiconductors; (11̅00) m-sapphire; (112̅2) semipolar GaN MQW; (112̅2) semipolar InGaN-GaN MQW; Al2O3; GaN; InGaN-GaN; crystalline properties; growth temperature effect; optical properties; temperature 1020 C; Crystals; Gallium nitride; Optical polarization; Optical surface waves; Quantum well devices; Surface morphology; Temperature;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
