DocumentCode :
689753
Title :
Enhancement of spontaneous emission rate in an InGaN quantum dot coupled to a plasmonic cavity
Author :
Demory, Brandon ; Hill, Tyler ; Chu-Hsiang Teng ; Lei Zhang ; Hui Deng ; Ku, P.C.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
An enhanced spontaneous emission rate was experimentally observed from a single semiconductor quantum dot, exhibiting photon antibunching, coupled to a silver plasmonic cavity.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; photoluminescence; photon antibunching; plasmonics; semiconductor quantum dots; silver; spontaneous emission; InGaN-Ag; indium gallium nitride quantum dot-silver plasmonic cavity coupling; photon antibunching; semiconductor quantum dot; spontaneous emission rate enhancement; Cavity resonators; Coatings; Fabrication; Plasmons; Quantum dots; Silver;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6834140
Link To Document :
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