DocumentCode :
689910
Title :
Observation of optically stimulated depletion of carbon acceptor bound excitons in GaAs
Author :
Karin, Todd ; Barbour, Russell ; Kai-Mei Fu
Author_Institution :
Phys. Dept., Univ. of Washington, Seattle, WA, USA
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
We observe stimulated emission of acceptor bound excitons into an excited acceptor state. This technique is used to estimate spin coherence parameters for acceptors and may pave a path toward single acceptor isolation.
Keywords :
III-V semiconductors; bound states; carbon; excited states; excitons; gallium arsenide; impurity states; stimulated emission; GaAs:C; carbon acceptor bound excitons; excited acceptor state; optically stimulated depletion; single acceptor isolation; spin coherence parameters; stimulated emission; Excitons; Impurities; Laser excitation; Laser modes; Laser transitions; Optical diffraction; Stimulated emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6834300
Link To Document :
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