Title :
Phonon-assisted bandtail anti-stokes photoluminescence of GaN: Novel mechanism for laser cooling
Author :
Guan Sun ; Ruolin Chen ; Ding, Yujie J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA
Abstract :
Anti-Stokes photoluminescence (ASPL) of n-type GaN is observed at room temperature. By studying behaviors of ASPL, the mechanism is identified as phonon-assisted bandtail photoluminescence. Such a process results in laser cooling.
Keywords :
III-V semiconductors; gallium compounds; laser cooling; optical materials; photoluminescence; ASPL; GaN; laser cooling; n-type GaN; phonon-assisted bandtail anti-Stokes photoluminescence; room temperature; temperature 293 K to 298 K; Cooling; Gallium nitride; Laser excitation; Photonics; Pump lasers; Semiconductor lasers; Temperature measurement;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
