DocumentCode :
690173
Title :
Raman enhanced supercontinuum generation from 2–20 μm in GaAs using 3 ps CO2 laser pulses
Author :
Pigeon, J.J. ; Tochitsky, S.Ya. ; Joshi, C.
Author_Institution :
Dept. of Electr. Eng., UCLA, Los Angeles, CA, USA
fYear :
2013
fDate :
9-14 June 2013
Firstpage :
1
Lastpage :
2
Abstract :
Supercontinua covering the entire mid-IR region were obtained by sending a train of 3 ps CO2 laser pulses through a 67mm GaAs crystal. The spectral width is attributed to stimulated Raman scattering and self-phase modulation.
Keywords :
III-V semiconductors; gallium arsenide; high-speed optical techniques; self-phase modulation; spectral line breadth; stimulated Raman scattering; supercontinuum generation; CO2; CO2 laser pulses; GaAs; Raman enhanced supercontinuum generation; mid-IR region; self-phase modulation; size 67 mm; spectral width; stimulated Raman scattering; time 3 ps; Crystals; Gallium arsenide; Measurement by laser beam; Modulation; Nonlinear optics; Optical pumping; Pump lasers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2013 Conference on
Conference_Location :
San Jose, CA
Type :
conf
Filename :
6834566
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=690173
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