UV Enhanced Field Emission Performance of Mg-Doped ZnO Nanorods

Author

Liu, Y.H. ; Sheng-Joue Young ; Ji, L.W. ; Meen, T.H. ; Hsiao, C.H. ; Huang, C.S. ; Shoou-Jinn Chang

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

61

Issue

5

fYear

2014

fDate

May-14

Firstpage

1541

Lastpage

1545

Abstract

Vertical Mg-ZnO nanorods were synthesized on glass substrates using a low-temperature hydrothermal method. The field emission performance of Mg-ZnO nanorods was greatly enhanced by UV light illumination. It was found that the Mg-ZnO nanorods grown at 80 °C were structurally uniform and well oriented with pure wurtzite structure. Mg-ZnO nanorod exhibited turn-on fields was 2.27 V/μm, and field enhancement factors (β) was 2212. UV illumination of the Mg-ZnO nanorod reduced the turn-on electrical field from 2.27 to 1.97 V/μm and enhanced the β from 2212 and 4136.

Keywords

II-VI semiconductors; field emission; magnesium; nanorods; wide band gap semiconductors; zinc compounds; Mg-ZnO; UV enhanced field emission performance; UV light illumination; field enhancement factors; glass substrates; low-temperature hydrothermal method; temperature 80 degC; vertical nanorods; wurtzite structure; Educational institutions; Glass; Lighting; Photonic band gap; Substrates; Zinc oxide; Field emitters; Mg-doped ZnO; hydrothermal method; nanorod; nanorod.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2312853

Filename

6784417