Title :
1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon
Author :
Mingda Zhu ; Bo Song ; Meng Qi ; Zongyang Hu ; Nomoto, Kazuki ; Xiaodong Yan ; Yu Cao ; Johnson, Wayne ; Kohn, Erhard ; Jena, Debdeep ; Xing, Huili Grace
Author_Institution :
Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA
Abstract :
In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance RON,SP (5.12 mQ · cm2), a low turn-ON voltage (<; 0.7 V), and a high reverse breakdown voltage (BV) (>1.9 kV) were simultaneously achieved in devices with a 25-μm anode/cathode distance, resulting in a power figure-of-merit BV2/RON,SP of 727 MW · cm-2. The record high BV of 1.9 kV is attributed to the dual field-plate structure.
Keywords :
III-V semiconductors; Schottky barriers; Schottky diodes; aluminium compounds; electric breakdown; electrochemical electrodes; elemental semiconductors; gallium compounds; silicon; wide band gap semiconductors; AlGaN-GaN-Si; BV; anode-cathode distance; distance 25 mum; dual field-plate structure; high reverse breakdown voltage; lateral Schottky barrier diode on silicon; power figure-of-merit; voltage 1.9 kV; Aluminum gallium nitride; Anodes; Gallium nitride; Schottky barriers; Schottky diodes; Silicon; Substrates; AlGaN/GaN; Break-down voltage; Field plate; GaN on Silicon; GaN on silicon; High voltage device; Schottky barrier diode; breakdown voltage; field plate; high voltage device;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2015.2404309
