1.9-kV AlGaN/GaN Lateral Schottky Barrier Diodes on Silicon

Author

Mingda Zhu ; Bo Song ; Meng Qi ; Zongyang Hu ; Nomoto, Kazuki ; Xiaodong Yan ; Yu Cao ; Johnson, Wayne ; Kohn, Erhard ; Jena, Debdeep ; Xing, Huili Grace

Author_Institution

Dept. of Electr. Eng., Univ. of Notre Dame, Notre Dame, IN, USA

Volume

36

Issue

4

fYear

2015

fDate

Apr-15

Firstpage

375

Lastpage

377

Abstract

In this letter, we present AlGaN/GaN lateral Schottky barrier diodes on silicon with recessed anodes and dual field plates. A low specific ON-resistance R_ON,SP (5.12 mQ · cm²), a low turn-ON voltage (<; 0.7 V), and a high reverse breakdown voltage (BV) (>1.9 kV) were simultaneously achieved in devices with a 25-μm anode/cathode distance, resulting in a power figure-of-merit BV²/R_ON,SP of 727 MW · cm^-2. The record high BV of 1.9 kV is attributed to the dual field-plate structure.

Keywords

III-V semiconductors; Schottky barriers; Schottky diodes; aluminium compounds; electric breakdown; electrochemical electrodes; elemental semiconductors; gallium compounds; silicon; wide band gap semiconductors; AlGaN-GaN-Si; BV; anode-cathode distance; distance 25 mum; dual field-plate structure; high reverse breakdown voltage; lateral Schottky barrier diode on silicon; power figure-of-merit; voltage 1.9 kV; Aluminum gallium nitride; Anodes; Gallium nitride; Schottky barriers; Schottky diodes; Silicon; Substrates; AlGaN/GaN; Break-down voltage; Field plate; GaN on Silicon; GaN on silicon; High voltage device; Schottky barrier diode; breakdown voltage; field plate; high voltage device;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2015.2404309

Filename

7042840