1.3-μm Range Metamorphic InGaAs Laser With High Characteristic Temperature for Low Power Consumption Operation

Author

Arai, Manabu ; Kobayashi, Wataru ; Kohtoku, M.

Author_Institution

NTT Photonics Labs., NTT Corp., Kanagawa, Japan

Volume

19

Issue

4

fYear

2013

fDate

July-Aug. 2013

Firstpage

1502207

Lastpage

1502207

Abstract

We demonstrated a 1.3-μm-range laser with a high characteristic temperature (T₀ = 220 K) and the highest operating temperature (200 °C) ever reported for a metamorphic laser. The temperature characteristics were greatly improved by inserting a p-InGaAlAs electron stopper layer. In addition, we realized a high f_r value with a low injection current using a short cavity (L = 200 μm) laser operating at a high temperature. The bias current at 10 Gbit/s and 85 °C was only 15 mA. These results show that a laser with a metamorphic buffer on a GaAs substrate is a good candidate as an uncooled light source with low power consumption.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser beams; laser cavity resonators; quantum well lasers; GaAs; GaAs substrate; InGaAs-InGaAlAs; bias current; bit rate 10 Gbit/s; current 15 mA; electron stopper layer; high characteristic temperature; injection current; low power consumption operation; metamorphic buffer; metamorphic laser; short cavity laser; temperature 200 degC; temperature 220 K; temperature 85 degC; uncooled light source; wavelength 1.3 mum; Indium; Indium gallium arsenide; Lasers; Quantum well devices; Substrates; Temperature; Temperature dependence; InGaAs; laser; metamorphic; uncooled;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2013.2247978

Filename

6470624