Gate-All-Around Nanowire MOSFET With Catalytic Metal Gate For Gas Sensing Applications

Author

Gautam, Ruchita ; Saxena, Manoj ; Gupta, R.S. ; Gupta, Madhu

Author_Institution

Dept. of Electron. Sci., Univ. of Delhi, New Delhi, India

Volume

12

Issue

6

fYear

2013

fDate

Nov. 2013

Firstpage

939

Lastpage

944

Abstract

In this paper, gate-all-around (GAA) MOSFET with catalytic metal gate is proposed for enhanced sensitivity of gas sensor. P-channel GAA MOSFET with palladium (Pd) metal gate is used for hydrogen sensing and n-channel GAA MOSFET with silver (Ag) metal gate is used for Oxygen sensing. The GAA nanowire MOSFET has already been demonstrated experimentally for biosensing and chemical sensing applications. However, cylindrical GAA MOSFET with catalytic metal gate for gas sensing applications is proposed for the first time in this paper. An analytical model is developed for both p-channel and n-channel GAA MOSFET to calculate the sensitivity of the device in the presence of gas molecules and analytical model is verified with the simulation results of ATLAS-3D. Sensitivity of the GAA MOSFET gas sensor is compared with the conventional bulk MOSFET gas sensor and impact of the radius of the silicon pillar on the sensitivity of the GAA MOSFET is also studied.

Keywords

MOSFET; gas sensors; hydrogen; nanowires; oxygen; palladium; silver; work function; ATLAS-3D simulation; biosensing; catalytic metal gate; chemical sensing; gas sensing; gate-all-around nanowire MOSFET; hydrogen sensing; n-channel GAA MOSFET; oxygen sensing; p-channel GAA MOSFET; Gas detectors; Logic gates; MOSFET; Metals; Sensitivity; Silicon; ATLAS-3D; gas sensor; gate-all-around (GAA) MOSFET; sensitivity; work function;

fLanguage

English

Journal_Title

Nanotechnology, IEEE Transactions on

Publisher

ieee

ISSN

1536-125X

Type

jour

DOI

10.1109/TNANO.2013.2276394

Filename

6574290