Gate-All-Around Nanowire MOSFET With Catalytic Metal Gate For Gas Sensing Applications

In this paper, gate-all-around (GAA) MOSFET with catalytic metal gate is proposed for enhanced sensitivity of gas sensor. P-channel GAA MOSFET with palladium (Pd) metal gate is used for hydrogen sensing and n-channel GAA MOSFET with silver (Ag) metal gate is used for Oxygen sensing. The GAA nanowire MOSFET has already been demonstrated experimentally for biosensing and chemical sensing applications. However, cylindrical GAA MOSFET with catalytic metal gate for gas sensing applications is proposed for the first time in this paper. An analytical model is developed for both p-channel and n-channel GAA MOSFET to calculate the sensitivity of the device in the presence of gas molecules and analytical model is verified with the simulation results of ATLAS-3D. Sensitivity of the GAA MOSFET gas sensor is compared with the conventional bulk MOSFET gas sensor and impact of the radius of the silicon pillar on the sensitivity of the GAA MOSFET is also studied.