Title :
Quantum-Dot-Based Mid-IR Single-Photon Detector With Self-Quenching and Self-Recovering Operation
Author :
Zavvari, M. ; Ahmadi, Vahid
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ., Urmia, Iran
Abstract :
A single-photon detector based on an avalanche quantum dot IR photodetector is presented and designed for self-quenching and self-recovering operation at IR wavelength. The device consists of dot layers and resonant tunneling barriers in the absorption region. An additional layer, called the transient carrier buffer, is added to trap the backward holes. For an avalanche process, the accumulation of backward-traveling-avalanche-generated holes leads to a reduction in the electric field of the multiplication region and avalanche gain, and consequently, the detector is quenched. The detector is self-recovered by thermionic emission and tunneling currents. We study the self-quenching and self-recovery performance of the device. A detection efficiency of around 8% is obtained.
Keywords :
avalanche photodiodes; hole traps; infrared detectors; optical design techniques; photodetectors; photoexcitation; resonant tunnelling; resonant tunnelling diodes; semiconductor quantum dots; thermionic emission; IR wavelength; absorption; avalanche gain; avalanche process; avalanche quantum dot IR photodetector; backward hole trap; backward-traveling-avalanche-generated holes; detection efficiency; dot layers; electric held; multiplication region; quantum-dot-based mid-IR single-photon detector; resonant tunneling barriers; self-quenching operation; self-recovering operation; thermionic emission; transient carrier buffer; tunneling currents; Mid-wavelength IR; quantum dot IR photodetector; self-quenching; single-photon detector;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2013.2258396