Title :
Analysis of multilevel capability of a filamentary resistive memory cell
Author :
Tong Liu ; Yuhong Kang ; Potnis, Tanmay ; El-Helw, Sarah ; Orlowski, Marius
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Abstract :
The linear relation between the on-resistance and compliance current in all resistive filamentary memory devices is valid over more than six orders of magnitude of resistance and current values for a multitude of various devices. The multilevel memory storage capability of a resistive cell relies on this remarkable relation characterized by a single constant K. In this work we show that the constant K is related to a minimum SET voltage and is independent of the conduction mechanisms and of the materials of the cell.
Keywords :
random-access storage; tantalum compounds; Cu-TaOx-Pt; compliance current; filamentary resistive memory cell; multilevel memory storage capability; on-resistance; voltage constant K; Bridge circuits; Electrodes; Electron devices; Materials; Nanoscale devices; Resistance; Switches; CBRAM; MLC; TaOx; resistive filamentary switching;
Conference_Titel :
Non-Volatile Memory Technology Symposium (NVMTS), 2013 13th
Conference_Location :
Minneapolis, MN
DOI :
10.1109/NVMTS.2013.6851048
