DocumentCode
692156
Title
Analysis of multilevel capability of a filamentary resistive memory cell
Author
Tong Liu ; Yuhong Kang ; Potnis, Tanmay ; El-Helw, Sarah ; Orlowski, Marius
Author_Institution
Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
fYear
2013
fDate
12-14 Aug. 2013
Firstpage
1
Lastpage
4
Abstract
The linear relation between the on-resistance and compliance current in all resistive filamentary memory devices is valid over more than six orders of magnitude of resistance and current values for a multitude of various devices. The multilevel memory storage capability of a resistive cell relies on this remarkable relation characterized by a single constant K. In this work we show that the constant K is related to a minimum SET voltage and is independent of the conduction mechanisms and of the materials of the cell.
Keywords
random-access storage; tantalum compounds; Cu-TaOx-Pt; compliance current; filamentary resistive memory cell; multilevel memory storage capability; on-resistance; voltage constant K; Bridge circuits; Electrodes; Electron devices; Materials; Nanoscale devices; Resistance; Switches; CBRAM; MLC; TaOx ; resistive filamentary switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Non-Volatile Memory Technology Symposium (NVMTS), 2013 13th
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/NVMTS.2013.6851048
Filename
6851048
Link To Document