A 60GHz power amplifier with 12.1 dBm & P1dBCP in 0.18um SiGe BiCMOS process

Author

Wei Meng Lim ; Jiangmin Gu ; Jialin Feng ; Kiat Seng Yeo ; Xiaopeng Yu ; Siek, Liter ; Kok Meng Lim ; Chirn Chye Boon ; Wanlan Yang ; Jinna Yan

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore

fYear

2013

fDate

17-19 Nov. 2013

Firstpage

138

Lastpage

141

Abstract

This paper describes the design and analysis of a four-stages 60GHz SiGe BiCMOS power amplifier. The proposed circuit uses single-ended common-emitter topology that draws 72mW from 1.8V supply. It is able to deliver 12.1dBm output, 17.4dB power gain with a peak 14.1% PAE at its compression point. The S21 has a 3dB bandwidth from 55GHz to 67GHz, which covers the whole of 60GHz band. The power amplifier occupy a silicon area of 1.1 × 0.46 um² and the measured results show that it can be fully adopted in the 60GHz ISM band applications.

Keywords

BiCMOS analogue integrated circuits; integrated circuit design; millimetre wave power amplifiers; network analysis; silicon compounds; BiCMOS power amplifier; BiCMOS process; ISM band applications; PAE; S21; SiGe; compression point; frequency 55 GHz to 67 GHz; gain 17.4 dB; power 72 mW; power gain; silicon area; single-ended common-emitter topology; size 0.18 mum; size 0.46 mum; size 1.1 mum; voltage 1.8 V; BiCMOS integrated circuits; Conferences; Educational institutions; Impedance; Power amplifiers; Power generation; Silicon germanium; 60GHz ISM band; P1dB; Psat; PAE; SiGe; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2013 International

Conference_Location

Busan

Type

conf

DOI

10.1109/ISOCC.2013.6863955

Filename

6863955