A fully integrated UHF passive tag IC having one-time programmable memory in standard CMOS technology

Author

Vinh Hao Duong ; Ngoc Dang Phan ; Hyun-Sik Lee ; Dasom Park ; Jong-Wook Lee

Author_Institution

Sch. of Electron. & Inf., Kyung Hee Univ., Suwon, South Korea

fYear

2013

fDate

17-19 Nov. 2013

Firstpage

144

Lastpage

147

Abstract

We present a 2-Kb one-time programmable (OTP) memory for high security RFID applications. The OTP memory cell is based on a two-transistor (2-T) gate-oxide anti-fuse (AF) for low voltage operation. Improved low power circuit design techniques are used including auto shut-off for program mode and self-timed control for read mode. The designed OTP is successfully embedded into a UHF passive RFID tag IC that conforms to the EPCglobal Gen-2 standard. The tag chip was fabricated in a 0.18 μm 1-poly 6-metal standard CMOS process with no additional masks.

Keywords

CMOS integrated circuits; UHF integrated circuits; low-power electronics; radiofrequency identification; 1-poly 6-metal standard CMOS process; EPCglobal Gen-2 standard; OTP memory cell; UHF passive RFID tag IC; fully integrated UHF passive tag IC; high security RFID applications; low power circuit design techniques; low voltage operation; one-time programmable memory; size 0.18 mum; standard CMOS technology; storage capacity 2 Kbit; tag chip; two-transistor gate-oxide anti-fuse; Clocks; Generators; Integrated circuits; Logic gates; Programming; Radiofrequency identification; Standards; CMOS; Tag IC; UHF-band; energy harvesting; one-time programmable memory;

fLanguage

English

Publisher

ieee

Conference_Titel

SoC Design Conference (ISOCC), 2013 International

Conference_Location

Busan

Type

conf

DOI

10.1109/ISOCC.2013.6863957

Filename

6863957