DocumentCode :
692517
Title :
High performance low Vcc operation by hiding repair information access latency
Author :
Hayoung Kim ; Mungyu Son ; Sungjoo Yoo ; Sunggu Lee
Author_Institution :
POSTECH, Pohang, South Korea
fYear :
2013
fDate :
17-19 Nov. 2013
Firstpage :
180
Lastpage :
183
Abstract :
Bit errors in SRAM are one of the most critical problems in reducing supply voltage. Existing methods to address this problem share a common issue of additional latency in SRAM access for error correction or data repair. The additional latency increases clock period thereby losing opportunities of further reduction in supply voltage. In this paper, we propose an architectural retiming to hide the additional latency for data repair. It reduces clock period (typically determined by the memory access stage at low supply voltage) by moving the function of data repair information access from the memory access stage to an earlier pipe stage. Our case study with an existing CPU core design shows that the proposed method offers up to 42% higher operating frequency at 0.6V.
Keywords :
SRAM chips; clocks; error correction; low-power electronics; CPU core design; SRAM access; architectural retiming; bit errors; clock period; data repair information access; error correction; high performance low Vcc operation; low supply voltage; memory access stage; repair information access latency; voltage 0.6 V; Circuit faults; Computer architecture; Maintenance engineering; Random access memory; Synchronization; System-on-chip; Address remapping; Low Vcc operation; Retiming;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SoC Design Conference (ISOCC), 2013 International
Conference_Location :
Busan
Type :
conf
DOI :
10.1109/ISOCC.2013.6863966
Filename :
6863966
Link To Document :
بازگشت