Title :
Soft pre-charge H/V switch for 3D Solid State Drive with NAND flash memories
Author :
Youngil Kim ; Sungwook Choi ; Jaeho Lee ; Hyunchul Cho ; Samkyu Won ; Sungdae Choi ; Duckju Kim ; Taeyun Kim ; Gunwoo Park ; SangSun Lee
Author_Institution :
Flash Dev. Div., SK Hynix Semicond. Inc., Icheon, South Korea
Abstract :
This paper proposed program voltage circuit techniques for 3D Solid State Drives (SSDs) with NAND flash memories. We reduced the charge pump stage using external high voltages of 12V and 5V with a proposed soft pre-charge high voltage switch to improve the power efficiency and area efficiency without a breakdown issue. The physical layout area in comparison with a conventional scheme and improves the power efficiency.
Keywords :
NAND circuits; charge pump circuits; driver circuits; flash memories; switches; 3D solid state drive; NAND flash memories; SSD; area efficiency; charge pump stage; physical layout area; power efficiency; program voltage circuit; soft pre-charge high voltage switch; voltage 12 V; voltage 5 V; Breakdown voltage; Charge pumps; Flash memories; Generators; Switches; Transistors; Voltage control; Boost Converter; Charge Pump; High Voltage Switch; NAND flash memory; Solid State Drive (SSD);
Conference_Titel :
SoC Design Conference (ISOCC), 2013 International
Conference_Location :
Busan
DOI :
10.1109/ISOCC.2013.6864044
