Title :
Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors
Author :
Kai Ding ; Chengyan Wang ; Bintian Zhang ; Yang Zhang ; Min Guan ; Lijie Cui ; Yuwei Zhang ; Yiping Zeng ; Zhang Lin ; Feng Huang
Author_Institution :
Key Lab. of Optoelectron. Mater. Chem. & Phys., Fujian Inst. of Res. on the Struct. of Matter, Fuzhou, China
Abstract :
Alpha-fetoprotein (AFP) is a typical tumor marker in early diagnosis. Highly specific detection of the AFP was demonstrated using AlGaAs/GaAs high electron mobility transistors (HEMTs). Anti-AFP antibody was immobilized to the Au-coated gate area of the HEMT by a covalent modification method. To avoid any nonspecific binding, the gate was blocked by bovine serum albumin after the reduction of the carbonyl group. A detection limit for the AFP as low as a few picograms/milliliter was achieved, and cross reactivity of the sensor was found negligible, demonstrating its high selectivity. Successful detection with minute quantity of the sample indicates that the sensor has great potential in practical screening for a wide population.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gold; high electron mobility transistors; proteins; tumours; AlGaAs-GaAs; Au; Au-coated gate area; HEMT; alpha-fetoprotein; anti-AFP antibody; bovine serum albumin; carbonyl group reduction; covalent modification; diagnosis; high electron mobility transistors; sensor cross reactivity; specific detection; tumor marker; Aluminum gallium nitride; Cancer; Gallium arsenide; Gallium nitride; HEMTs; Logic gates; MODFETs; AlGaAs/GaAs; HEMT; biosensor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2298397