Design of concurrent multiband inductive degeneration low noise amplifier with LC resonator

In this research, the concurrent multiband LNA that works at four frequency centers of 950 MHz, 1.85 GHz, 2.35 GHz, and 2.65 GHz will be designed and analyzed. The multiband LNA uses transistor HJ-FET NE3210S01 in cascode structure with self bias and inductive degeneration topology with resonator LC. The performances of multiband LNA are simulated by Advance Design System (ADS). It is shown from the simulation results that, at four frequency centers of 950 MHz, 1.85 GHz, 2.35 GHz, and 2.65 GHz, the S₂₁ achieves 21.77 dB, 17.88 dB, 16.71 dB, and 15.85 dB respectively, the S11 achieves -23.23 dB, -20.46 dB, -17.93 dB, and -19.69 dB respectively, the NF achieves 0.73 dB, 0.69 dB, 0.68 dB and 0.75 dB respectively.