Title :
Fluorinated Graphene FETs Controlled by Ionic Liquid Gate
Author :
Furuyama, S. ; Tahara, K. ; Iwasaki, Takuya ; Matsutani, Akihiro ; Hatano, M.
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
Fluorinated graphene field effect transistors (FETs) with an ionic liquid (IL) top-gate are demonstrated. Fluorinated graphene functionalized with different fluorine concentrations were prepared. Highly fluorinated graphene FETs controlled by ionic liquid gating (ILG) exhibited higher on/off ratios than pristine (non-fluorinated) graphene FET, while conventional back gating (BG) configuration resulted in lower on/off ratios. ILG can induce high charge density in fluorinated graphene with localized states because of extremely high electric field effect of an electric double layer between IL and fluorinated graphene. Thus, a higher on/off ratio was obtained by the combination of graphene fluorination and ILG.
Keywords :
electric field effects; field effect transistors; graphene; IL top-gate; ILG combination; conventional BG configuration; conventional back gating configuration; electric double layer; fluorinated graphene FET; fluorinated graphene field effect transistors; fluorine concentration; graphene fluorination combination; high-charge density; high-electric field effect; ionic liquid gating; ionic liquid top gate; localized states; on-off ratio; pristine graphene FET; Atomic layer deposition; Carbon; Conductivity; Field effect transistors; Graphene; Liquids; Logic gates; Fluorination; graphene; ionic liquid (IL);
Journal_Title :
Display Technology, Journal of
DOI :
10.1109/JDT.2014.2332636
