Electrical characterization of PMMA:TiO2 gate dielectric for metal-insulator-semiconductor devices

This paper investigated the effect of dielectric thickness to the electrical properties metal-insulator-semiconductor (MIS) device. The MIS device were fabricated having PMMA:TiO₂ and ZnO as dielectric and semiconductor layer, respectively. The PMMA:TiO₂ nancomposite dielectric film were deposited at different deposition speed from 1000, 2000, 3000, 4000, 5000, 6000 rpm. Results showed that there is difference in the nanocomposite dielectric film thickness when varying the deposition speed. As the spin speed increased, the thickness of the nanocomposite dielectric layer was reduced. The performance of MIS device is degraded when thickness of the nanocomposite dielectric layer is decreased. The AFM image was observed to have an agglomeration of particles on the nanocomposite dielectric films. Roughness increased when spin speed are increased.