DocumentCode
695317
Title
Contact pitch and location prediction for Directed Self-Assembly template verification
Author
Zigang Xiao ; Yuelin Du ; Wong, Martin D. F. ; He Yi ; Wong, H-S Philip ; Hongbo Zhang
Author_Institution
Univ. of Illinois at Urbana-Champaign, Champaign, IL, USA
fYear
2015
fDate
19-22 Jan. 2015
Firstpage
644
Lastpage
651
Abstract
Directed Self-Assembly (DSA) is a promising technique for contacts/vias patterning in 7 nm technology nodes. In DSA process, groups of contact holes/vias are generated by the self-assembly process guided by the `guiding templates´. The guiding templates are patterned by conventional optical lithography process such as 193 nm immersion lithography. As a result, the patterning fidelity and variation in the template shapes is very likely to affect the final contact holes/vias. While feasible in principle, rigorous DSA process simulation is unacceptably slow for full chip verification in practice. This paper proposes a machine learning based verification that can predict the pitch size of the contact holes and the hole centers. Given a set of training data that consists of simulated template and contact hole patterns, our method is able to learn a highly accurate predictive model for pitch size and hole location. To build a statistical model for prediction, we utilize computer vision techniques to extract various geometric and image features. We conduct extensive experiments to explore the effectiveness of the proposed features, and compare several machine learning algorithms to achieve an effective and efficient prediction. The experimental results show that compared to the minutes or even hours of simulation time in rigorous methods, our best prediction model achieves very promising results (RMSE = 0.135 pitch grid) with less than one second of training and predicting runtime overhead.
Keywords
computer vision; electronic engineering computing; learning (artificial intelligence); mean square error methods; nanolithography; nanopatterning; photolithography; self-assembly; statistical analysis; vias; DSA process simulation; RMSE; computer vision techniques; contact hole patterns; contact holes; contact pitch; contacts-vias patterning; directed self-assembly template verification; full chip verification; guiding templates; hole location; image features; immersion lithography; location prediction; machine learning algorithms; machine learning based verification; optical lithography process; patterning fidelity; pitch grid; pitch size; prediction model; predictive model; root mean squared error; self-assembly process; size 193 nm; size 7 nm; statistical model; Feature extraction; Integrated circuit modeling; Lithography; Predictive models; Shape; Training; Training data;
fLanguage
English
Publisher
ieee
Conference_Titel
Design Automation Conference (ASP-DAC), 2015 20th Asia and South Pacific
Conference_Location
Chiba
Print_ISBN
978-1-4799-7790-1
Type
conf
DOI
10.1109/ASPDAC.2015.7059081
Filename
7059081
Link To Document