Title :
Modeling of the Steady State and Switching Characteristics of a Normally Off 4H-SiC Trench Bipolar-Mode FET
Author_Institution :
Dipt. di Ing. dell´Inf., delle Infrastrutt. e dell´Energia Sostenibile (DIIES), Univ. Mediterranea di Reggio Calabria, Reggio Calabria, Italy
Abstract :
The electrical characteristics of a normally off 4H-silicon carbide (SiC) bipolar-mode FET are investigated by means of a careful design activity and an intensive simulation study useful for a first-time-ever realization of this device in SiC. Specific physical models and parameters strictly related to the presently available 4H-SiC technology are taken into account. The device basically consists of a trench vertical JFET operating in the bipolar mode that takes full advantage of the superior material properties. A drain-current density up to 500 A/cm2, a forced current gain on the order of 50, and a specific on-resistance as low as 1.3 mΩ·cm2 are calculated for a 1.3-kV blocking voltage device. The turn-off delay is on the order of a few nanoseconds. The presented analysis is supported by experimental results on the p-i-n diodes embedded in the device structure.
Keywords :
bipolar transistors; current density; junction gate field effect transistors; p-i-n diodes; semiconductor device models; silicon compounds; wide band gap semiconductors; SiC; drain-current density; electrical characteristics; first-time-ever realization; forced current gain; intensive simulation; normally off 4H-SiC trench bipolar-mode FET; p-i-n diodes; physical models; steady state; switching characteristics; trench vertical JFET; turn-off delay; voltage 1.3 kV; Charge carrier lifetime; Doping; Junctions; Logic gates; P-i-n diodes; Semiconductor process modeling; Silicon carbide; Breakdown voltage; device modeling; power devices; silicon carbide (SiC);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2013.2244603
