DocumentCode
697690
Title
Application of IGT/COMFET to zero-current switching resonant converters
Author
Rangan, R. ; Chen, D.Y. ; Yang, J. ; Lee, J.
Author_Institution
Department of Electrical Engineering, Virginia Polytechnic Institute and State University, Blacksburg, Virginia 24061
fYear
1987
fDate
21-26 June 1987
Firstpage
55
Lastpage
60
Abstract
The problems associated with IGT/COMFET devices in PWM converters, such as turn-off current tailing and turn-off latching are largely avoided in a zero current switching resonant converter. Dv/dt induced phenomena, such as the power losses and latching, are identified as the predominant problems in using IGT/COMFET devices for very high frequency resonant operation.
Keywords
MOSFET; Pulse width modulation converters; Resonant frequency; Schottky diodes; Switches; Zero current switching;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1987 IEEE
Conference_Location
Blacksburg, VA, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1987.7077164
Filename
7077164
Link To Document