DocumentCode
697696
Title
A high voltage light activated thyristor with novel over voltage self-protection structure
Author
Shimizu, Y. ; Iyotani, R. ; Konishi, N. ; Yatsuo, T.
Author_Institution
Hitachi Research Laboratory, Hitachi, Ltd. 4026, Kuji, Hitachi, Ibaraki, 319-12, Japan
fYear
1987
fDate
21-26 June 1987
Firstpage
99
Lastpage
103
Abstract
A new type of high voltage self-protected thyristor with a well structure formed in its p-base layer is described. The device structure is simple and easy to fabricate compared to past devices. Numerical analyses and experiments demonstrate that the breakover voltage of this thyristor can be controlled by varying the well diameter and its depth. The breakdown voltage fluctuation of the device is 10% when the junction temperature is varied from 23°C to 100°C. This device is turned on safely at 7300 V. Fabricated devices show no degrading in important thyristor features.
Keywords
Dry etching; Electric fields; Junctions; Logic gates; Numerical models; Thyristors; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1987 IEEE
Conference_Location
Blacksburg, VA, USA
ISSN
0275-9306
Type
conf
DOI
10.1109/PESC.1987.7077170
Filename
7077170
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