مرکز منطقه ای اطلاع رساني علوم و فناوري - Back-Gate Effect on <inline-formula> <img src="/images/tex/25841.gif" alt="R_{math\\rm {{math\\rm{{\\scriptscriptstyle ON}},sp}}}"> </inline-formula> and BV for Thin Layer SOI Field p-Channel LDMOS

DocumentCode :

69788

Title :

Back-Gate Effect on $R_{math\\rm {{math\\rm{{\\scriptscriptstyle ON}},sp}}}$ and BV for Thin Layer SOI Field p-Channel LDMOS

Author :

Xin Zhou ; Ming Qiao ; Yitao He ; Zhuo Wang ; Zhaoji Li ; Bo Zhang

Author_Institution :

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume :

Issue :

fYear :

2015

fDate :

Apr-15

Firstpage :

1098

Lastpage :

1104

Abstract :

The Backgate (BG) effect on specific ON-resistance ( $R_{{{math\\rm{{\\scriptscriptstyle ON}},\\rm sp}}})$ and breakdown voltage (BV) for the thin layer Silicon On Insulator (SOI) field p-channel lateral diffusion MOS (pLDMOS) are investigated in this paper. BG-induced dual conduction mode for the thin layer SOI field pLDMOS is revealed, which includes drift and accumulation conduction. Hole accumulation layer induced by BG voltage ( $V_{\\rm BG})$ provides extra charges, resulting in a $R_{{{math\\rm{{\\scriptscriptstyle ON}},{\\rm sp}}}}$ reduction. An expression of equivalent $R_{{{math\\rm{{\\scriptscriptstyle ON}},{\\rm sp}}}}$ is given to describe the dependence of $R_{{{math\\rm{{\\scriptscriptstyle ON}},{\\rm sp}}}}$ on $V_{\\rm BG}$ . Simultaneously, $V_{\\rm BG}$ impacts strongly on BV, inducing three breakdown mechanisms: surface breakdown, bulk breakdown, and punchthrough breakdown. For surface breakdown, a positive linear dependence of BVs on $V_{\\rm BG}$ is given with consideration to multiple $_{_{}}$ field plates (MFP). BV of −366 V and $R_{{{math\\rm{{\\scriptscriptstyle ON}},{\\rm sp}}}}$ of $7.5~\\Omega \\cdot$ mm $^{2}$ </tex- </\\inl\\i\\ne-for\\mula> for \\the th\\in layer SOI \\field pLDMOS are a\\chi eved \\experimenta\\lly at <\\inl\\i\\ne-for\\mula> $V_{\\rm BG} = -200$ V.

Keywords :

MOSFET; semiconductor device breakdown; silicon-on-insulator; back gate effect; breakdown mechanisms; breakdown voltage; bulk breakdown; field p-channel lateral diffusion MOS; on-resistance; punch-through breakdown; silicon-on-insulator; surface breakdown; thin layer SOI field p-channel LDMOS; Current density; Doping; Electric breakdown; Junctions; Resistance; Silicon-on-insulator; Voltage measurement; Back-gate (BG) effect; breakdown mechanism; dual conduction (DC) mode; specific ON-resistance ( (R_{{mathrm{scriptscriptstyle ON}},{rm sp}}) ); specific ON-resistance (RON,sp); thin layer SOI field p-channel lateral diffusion MOS (pLDMOS); thin layer SOI field p-channel lateral diffusion MOS (pLDMOS).;

fLanguage :

English

Journal_Title :

Electron Devices, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9383

Type :

jour

DOI :

10.1109/TED.2015.2399504

Filename :

7042924

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=69788