DocumentCode :
69800
Title :
A Five-Parameter Model of the AlGaN/GaN HFET
Author :
Bilbro, Griff L. ; Trew, Robert J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Volume :
62
Issue :
4
fYear :
2015
fDate :
Apr-15
Firstpage :
1157
Lastpage :
1162
Abstract :
We introduce an analytic expression for the drain current 
of an AlGaN/GaN heterojunction field-effect transistor (HFET) as a function of its gate and drain voltages. We derive the function from a compact physical model of conduction current in the HFET. The proposed expression for the current is configured by five parameters, which can be expressed in terms of the geometry and materials of a device. We extend the model to small-signal RF operation by embedding it in a 12-parameter 
network that represents terminal feed impedances and device parasitics. We adjust the parameters of the extended model to simultaneously fit dc and RF measurements of an industrial transistor.
Keywords :
III-V semiconductors; RLC circuits; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; 12-parameter RLC network; AlGaN-GaN; AlGaN-GaN heterojunction field-effect transistor; HFET; RF measurements; compact physical model; conduction current; dc measurements; device parasitics; drain current; drain voltages; gate voltages; industrial transistor; small-signal RF operation; terminal feed impedances; Aluminum gallium nitride; Equations; Gallium nitride; HEMTs; Logic gates; MODFETs; Mathematical model; AlGaN/GaN; HEMT; RF; RF.; analytic; compact model; continuously differentiable; dc; heterojunction field-effect transistor (HFET); physical; physics based;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2015.2394376
Filename :
7042928
Link To Document :
