DocumentCode :
69801
Title :
Successive Logic-in-Memory Operation in Spin Wave-Based Devices With Domain Wall Data Coding Scheme
Author :
Urazuka, Yasuo ; Imamura, Kousuke ; Oyabu, Shuhei ; Tanaka, T. ; Matsuyama, Kimihide
Author_Institution :
Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
Volume :
50
Issue :
11
fYear :
2014
fDate :
Nov. 2014
Firstpage :
1
Lastpage :
3
Abstract :
Data coding by current-driven domain wall (DW) depinning/pinning assisted by Oersted field was proposed and selective control of DW position was achieved in a perpendicularly magnetized wire in micromagnetic simulations. Sequential operations of logic operation following data coding have also been numerically demonstrated for spin wave and DW-based device. Inductive detection of interferrometric spin wave packets whose phase has been shifted by a DW pair showed successful logic operation in the optimized current pulse sequence applied for controlling the DW positions.
Keywords :
MRAM devices; encoding; ferromagnetic materials; magnetic logic; magnetoelectronics; micromagnetics; nanowires; DW depinning-pinning; DW position control; DW-based device; Oersted field; domain wall data coding scheme; ferromagnetic nanowire; interferrometric spin wave packet inductive detection; micromagnetic simulations; optimized current pulse sequence; perpendicularly magnetized wire; spin wave-based devices; successive logic-in-memory operation; Conductors; Current density; Encoding; Magnetic domain walls; Magnetic domains; Magnetic multilayers; Wires; Domain wall (DW)-based devices; domain wall pinning; ferromagnetic nanowire; magnetic domains; micromagnetic simulation;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.2014.2320759
Filename :
6971479
Link To Document :
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