• DocumentCode
    69801
  • Title

    Successive Logic-in-Memory Operation in Spin Wave-Based Devices With Domain Wall Data Coding Scheme

  • Author

    Urazuka, Yasuo ; Imamura, Kousuke ; Oyabu, Shuhei ; Tanaka, T. ; Matsuyama, Kimihide

  • Author_Institution
    Grad. Sch. of Inf. Sci. & Electr. Eng., Kyushu Univ., Fukuoka, Japan
  • Volume
    50
  • Issue
    11
  • fYear
    2014
  • fDate
    Nov. 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    Data coding by current-driven domain wall (DW) depinning/pinning assisted by Oersted field was proposed and selective control of DW position was achieved in a perpendicularly magnetized wire in micromagnetic simulations. Sequential operations of logic operation following data coding have also been numerically demonstrated for spin wave and DW-based device. Inductive detection of interferrometric spin wave packets whose phase has been shifted by a DW pair showed successful logic operation in the optimized current pulse sequence applied for controlling the DW positions.
  • Keywords
    MRAM devices; encoding; ferromagnetic materials; magnetic logic; magnetoelectronics; micromagnetics; nanowires; DW depinning-pinning; DW position control; DW-based device; Oersted field; domain wall data coding scheme; ferromagnetic nanowire; interferrometric spin wave packet inductive detection; micromagnetic simulations; optimized current pulse sequence; perpendicularly magnetized wire; spin wave-based devices; successive logic-in-memory operation; Conductors; Current density; Encoding; Magnetic domain walls; Magnetic domains; Magnetic multilayers; Wires; Domain wall (DW)-based devices; domain wall pinning; ferromagnetic nanowire; magnetic domains; micromagnetic simulation;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.2014.2320759
  • Filename
    6971479