Title :
A Novel Technique to Achieve High Bandwidth at Low Supply Voltage
Author :
Singh, Akanksha ; Niranjan, Vandana ; Kumar, Ashwni
Author_Institution :
Dept. of Electron. & Commun. Eng., Indira Gandhi Delhi Tech. Univ. for Women, Delhi, India
Abstract :
In this work we have demonstrated a novel technique to achieve high bandwidth in differential amplifier. This technique is based on using a composite transistor configuration consisting of dynamic threshold MOS transistor (DTMOS) and a source follower. This composite transistor has higher value of transconductance and bandwidth than conventional DTMOS. The use of this technique increases the bandwidth of differential amplifier by a factor of 3.36 at unity gain. Analytical and simulated results are in good agreement. All the circuits have been designed in 180nm CMOS technology. The proposed differential amplifier would find interesting applications for low voltage RF design.
Keywords :
CMOS integrated circuits; MOSFET; differential amplifiers; low-power electronics; radiofrequency integrated circuits; CMOS technology; composite transistor configuration; differential amplifier; dynamic threshold MOS transistor; low voltage RF design; size 180 nm; source follower; transconductance; Bandwidth; Differential amplifiers; Logic gates; MOSFET; Threshold voltage; Transconductance; Dynamic Threshold MOS transistor; Low voltage; high bandwidth; source follower; transconductance;
Conference_Titel :
Computational Intelligence & Communication Technology (CICT), 2015 IEEE International Conference on
Conference_Location :
Ghaziabad
Print_ISBN :
978-1-4799-6022-4
DOI :
10.1109/CICT.2015.48