A Novel Technique to Achieve High Bandwidth at Low Supply Voltage

In this work we have demonstrated a novel technique to achieve high bandwidth in differential amplifier. This technique is based on using a composite transistor configuration consisting of dynamic threshold MOS transistor (DTMOS) and a source follower. This composite transistor has higher value of transconductance and bandwidth than conventional DTMOS. The use of this technique increases the bandwidth of differential amplifier by a factor of 3.36 at unity gain. Analytical and simulated results are in good agreement. All the circuits have been designed in 180nm CMOS technology. The proposed differential amplifier would find interesting applications for low voltage RF design.