DocumentCode :
69911
Title :
Analysis and design of monolithic resistors with a desired temperature coefficient using contacts
Author :
Sadeghi, Nader ; Sadeghi, Iman ; Mirabbasi, Shahriar
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of British Columbia, Vancouver, BC, Canada
Volume :
7
Issue :
4
fYear :
2013
fDate :
Jul-13
Firstpage :
185
Lastpage :
192
Abstract :
A technique for implementing monolithic resistors with a desired temperature coefficient (TC) over a wide temperature range is introduced. A typical monolithic resistor consists of a core resistive layer terminated with contact layers on each end. In a typical process, there are core resistive layers that have TCs with opposite sign of that of the contacts. The authors propose to take advantage of this property and distribute a certain number of contacts across the core resistor to achieve a desired overall TC for monolithic resistors. This TC can be negative, zero or positive. The methodologies for designing such resistors are presented. As a proof-of-concept, several resistor structures have been designed and implemented in a 0.13 μm complementary metal-oxide semiconductor technology. The simulation and measurement results over the temperature range of 25-200°C confirm the validity of the proposed technique.
Keywords :
CMOS integrated circuits; electrical contacts; resistors; complementary metal-oxide semiconductor technology; contact layers; core resistive layer; monolithic resistor design; resistor structures; size 0.13 mum; temperature 25 degC to 200 degC; temperature coefficient;
fLanguage :
English
Journal_Title :
Circuits, Devices & Systems, IET
Publisher :
iet
ISSN :
1751-858X
Type :
jour
DOI :
10.1049/iet-cds.2012.0126
Filename :
6574684
Link To Document :
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