• DocumentCode
    70008
  • Title

    Compact CMOS Analog Counter for SPAD Pixel Arrays

  • Author

    Panina, Ekaterina ; Pancheri, Lucio ; Dalla Betta, Gian-Franco ; Massari, Nicola ; Stoppa, David

  • Author_Institution
    Dept. of Ind. Eng., Univ. of Trento, Trento, Italy
  • Volume
    61
  • Issue
    4
  • fYear
    2014
  • fDate
    Apr-14
  • Firstpage
    214
  • Lastpage
    218
  • Abstract
    In this brief, the design and experimental characterization of a compact analog readout circuit for photon counting is presented. A test chip, including a 20 × 20 counter array, has been manufactured in a standard 0.35-μm CMOS technology. The circuit delivers an output voltage proportional to the input pulse count, with a programmable voltage step. The counting resolution can be set to 7 or 8 bits with a readout noise of 0.15 and 0.3 electrons, respectively, and an output nonuniformity of 4% across the array, which brings a factor 3 improvement with respect to previous analog designs. A worst case integral nonlinearity of ±0.6 and ±1 LSB and a differential nonlinearity of ±0.3 and ±0.6 LSB were measured over the whole array of counters at 7- and 8-bit resolution, respectively. The area occupation of this analog implementation (230 μm2) is a factor 10 smaller than a digital counter of the same resolution. Due to the compactness and the lower counter power consumption with regard to the former designs, the proposed circuit can be exploited for signal processing in high-spatial resolution single-photon-avalanche-diode-based image sensors.
  • Keywords
    CMOS analogue integrated circuits; avalanche photodiodes; image sensors; photon counting; readout electronics; sensor arrays; CMOS technology; SPAD pixel arrays; analog implementation; compact CMOS analog counter; compact analog readout circuit; counter array; differential nonlinearity; digital counter; integral nonlinearity; lower counter power consumption; photon counting; programmable voltage step; signal processing; single-photon-avalanche-diode-based image sensors; size 0.35 mum; storage capacity 7 bit; storage capacity 8 bit; CMOS integrated circuits; CMOS technology; Noise; Photonics; Power demand; Radiation detectors; Transistors; Analog counter; CMOS; image sensor; single-photon avalanche diodes (SPADs);
  • fLanguage
    English
  • Journal_Title
    Circuits and Systems II: Express Briefs, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1549-7747
  • Type

    jour

  • DOI
    10.1109/TCSII.2014.2312094
  • Filename
    6784510