DocumentCode :
70011
Title :
Author :
Zheng-Da Huang ; Wen Yin Weng ; Shoou Jinn Chang ; Chiu-Jung Chiu ; Ting-Jen Hsueh ; San-Lein Wu
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
13
Issue :
9
fYear :
2013
fDate :
Sept. 2013
Firstpage :
3462
Lastpage :
3467
Abstract :
β-Ga2O3/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a -1 V applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a -10 V applied bias is 247.9.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; photodetectors; thin film sensors; ultraviolet detectors; wide band gap semiconductors; Ga2O3-AlGaN-GaN; PD; UV-A region; UV-B region; UV-C region; heterostructure ultraviolet three-band photodetector; thin film sensor; voltage -1 V; voltage -10 V; $beta{-}{rm Ga}_{2}{rm O}_{3}$
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2013.2264457
Filename :
6517889
Link To Document :
