• DocumentCode
    70011
  • Title

    {\\rm Ga}_{2}{\\rm O}_{3} /AlGaN/GaN Heterostructure Ultraviolet Three-Band Photodetector

  • Author

    Zheng-Da Huang ; Wen Yin Weng ; Shoou Jinn Chang ; Chiu-Jung Chiu ; Ting-Jen Hsueh ; San-Lein Wu

  • Author_Institution
    Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
  • Volume
    13
  • Issue
    9
  • fYear
    2013
  • fDate
    Sept. 2013
  • Firstpage
    3462
  • Lastpage
    3467
  • Abstract
    β-Ga2O3/AlGaN/GaN heterostructure three-band photodetectors (PDs) are fabricated and operated in ultraviolet (UV)-A, UV-B, and UV-C regions. The operation mode of the device can be switched by changing the applied bias and the thickness of the thin films. The UV-C to UV-B and UV-B to UV-A contrast ratios of the PD with a -1 V applied bias are 14.4 and 2157.9, respectively. The UV-A to visible contrast ratio of the PD with a -10 V applied bias is 247.9.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium compounds; photodetectors; thin film sensors; ultraviolet detectors; wide band gap semiconductors; Ga2O3-AlGaN-GaN; PD; UV-A region; UV-B region; UV-C region; heterostructure ultraviolet three-band photodetector; thin film sensor; voltage -1 V; voltage -10 V; $beta{-}{rm Ga}_{2}{rm O}_{3}$; AlGaN; GaN; photodetectors;
  • fLanguage
    English
  • Journal_Title
    Sensors Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1530-437X
  • Type

    jour

  • DOI
    10.1109/JSEN.2013.2264457
  • Filename
    6517889
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=70011