Title :
GaN power amplifiers design using genetic neural network model
Author :
Jarndal, Anwar H. ; Alhammadi, Omar A. ; Al-Ali, Rashid H.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Sharjah, Sharjah, United Arab Emirates
Abstract :
A genetic neural network based large-signal model for GaN HEMT transistor suitable for designing power amplifiers (PAs) is presented. The model has been demonstrated by designing linear power efficient amplifier. Two different approaches have been followed. The first approach is based on linear class AB amplifier with Doherty efficiency enhancement technique. The second approach depends on high efficiency switching-mode amplifier with simple feedback linearization.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; integrated circuit design; neural nets; power amplifiers; wide band gap semiconductors; Doherty efficiency enhancement technique; GaN; GaN HEMT transistor; GaN power amplifiers design; feedback linearization; genetic neural network model; high efficiency switching-mode amplifier; linear class AB amplifier; linear power efficient amplifier; Gallium nitride; HEMTs; Load modeling; Power amplifiers; Power generation; Silicon carbide; Switches; GaN HEMT; genetic optimization; high power amplifier; large-signal modeling; neural networks;
Conference_Titel :
Communications, Signal Processing, and their Applications (ICCSPA), 2015 International Conference on
Conference_Location :
Sharjah
DOI :
10.1109/ICCSPA.2015.7081304
