GaN power amplifiers design using genetic neural network model

Author

Jarndal, Anwar H. ; Alhammadi, Omar A. ; Al-Ali, Rashid H.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of Sharjah, Sharjah, United Arab Emirates

fYear

2015

fDate

17-19 Feb. 2015

Firstpage

1

Lastpage

6

Abstract

A genetic neural network based large-signal model for GaN HEMT transistor suitable for designing power amplifiers (PAs) is presented. The model has been demonstrated by designing linear power efficient amplifier. Two different approaches have been followed. The first approach is based on linear class AB amplifier with Doherty efficiency enhancement technique. The second approach depends on high efficiency switching-mode amplifier with simple feedback linearization.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; integrated circuit design; neural nets; power amplifiers; wide band gap semiconductors; Doherty efficiency enhancement technique; GaN; GaN HEMT transistor; GaN power amplifiers design; feedback linearization; genetic neural network model; high efficiency switching-mode amplifier; linear class AB amplifier; linear power efficient amplifier; Gallium nitride; HEMTs; Load modeling; Power amplifiers; Power generation; Silicon carbide; Switches; GaN HEMT; genetic optimization; high power amplifier; large-signal modeling; neural networks;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Signal Processing, and their Applications (ICCSPA), 2015 International Conference on

Conference_Location

Sharjah

Type

conf

DOI

10.1109/ICCSPA.2015.7081304

Filename

7081304