DocumentCode
70096
Title
A Four-FET Method for Extracting Mobility in FETs Without Field Oxide
Author
Majumdar, Angshul ; Ko-Tao Lee ; Cheng-Wei Cheng ; Kuen-Ting Shiu ; Sadana, Devendra K. ; Leobandung, Effendi
Author_Institution
IBM Res. Div., IBM T.J. Watson Res. Center, Yorktown Heights, NY, USA
Volume
61
Issue
11
fYear
2014
fDate
Nov. 2014
Firstpage
3833
Lastpage
3837
Abstract
Many fabricated III-V MOSFETs have electrically thin field oxide (FOX) that leads to parasitic currents and parasitic capacitances. When extracting long-channel mobility of such devices using the conventional two-FET method, some of these parasitic components are not subtracted out. In this paper, we present a simple four-FET method for extracting long-channel mobility that works well even when the equivalent oxide thickness (EOT) of the FOX is equal to the EOT of the FET gate oxide.
Keywords
III-V semiconductors; MOSFET; carrier mobility; FET gate oxide; III-V MOSFETs; equivalent oxide thickness; field oxide; four-FET method; long-channel mobility extraction; parasitic components; Capacitance; Logic gates; MOSFET; Metals; Resistance; Silicon; III–V FETs; III??V FETs; MOSFETs; mobility;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2014.2355911
Filename
6898837
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