In-Plane Gate Transistors for Photodetector Applications

Author

Yu-An Liao ; Wei-Hsun Lin ; Yi-Kai Chao ; Wen-Hao Chang ; Jen-Inn Chyi ; Shih-Yen Lin

Author_Institution

Dept. of Electrophys., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

34

Issue

6

fYear

2013

fDate

Jun-13

Firstpage

780

Lastpage

782

Abstract

In-plane gate transistors (IPGTs) with 20-μm channel widths are fabricated on samples with n-(InGa)As sheet resistance embedded in undoped GaAs matrix. A trade-off between effective current modulation and high saturation drain current is obtained by optimizing the doping density of the sheet resistance. The mechanism responsible for the transistor behaviors of the devices is due to the channel electron depletion related to the population of mobile surface electrons under different gate biases. The photocurrent measurements demonstrate that the IPGT architecture is a feasible approach for the applications of photodetectors.

Keywords

III-V semiconductors; electron mobility; field effect transistors; gallium arsenide; indium compounds; photodetectors; IPGT architecture; InGaAs; channel electron depletion; effective current modulation; high saturation drain current; in-plane gate transistor; mobile surface electron population; photodetector application; sheet resistance; size 20 mum; Detectors; in-plane gate transistors (IPGTs);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2013.2258456

Filename

6517908