Title :
Enhancing system-wide power integrity in 3D ICs with power gating
Author :
Hailang Wang ; Salman, Emre
Author_Institution :
Dept. of Electr. & Comput. Eng., Stony Brook Univ., Stony Brook, NY, USA
Abstract :
Power gating is a commonly used method to reduce subthreshold leakage current in nanoscale technologies. In through silicon via (TSV) based three-dimensional (3D) integrated circuits (ICs), power gating can significantly degrade system-wide power integrity since the decoupling capacitance associated with the power gated block/plane becomes ineffective for neighboring active planes, as demonstrated in this paper. A reconfig-urable decoupling capacitor topology is investigated to alleviate this issue by exploiting the ability of via-last TSVs to bypass plane-level power networks when delivering the supply voltage. Reconfigurable decoupling capacitors placed within a plane can provide charge to neighboring planes even when the plane is power gated, thereby significantly reducing both RMS power supply noise (by up to 46%) and RMS power gating (in-rush current) noise (by up to 85%) at the expense of a slight increase in area (by 1.55%) and peak power consumption (by 1.36%).
Keywords :
integrated circuit interconnections; leakage currents; nanotechnology; network topology; three-dimensional integrated circuits; 3D IC; 3D integrated circuits; TSV; bypass plane-level power networks; nanoscale technologies; power gating; reconfigurable decoupling capacitor topology; subthreshold leakage current reduction; system-wide power integrity; through silicon via; Capacitors; Logic gates; Noise; Switching circuits; Three-dimensional displays; Through-silicon vias; Topology; 3D IC; Power delivery; power gating;
Conference_Titel :
Quality Electronic Design (ISQED), 2015 16th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-4799-7580-8
DOI :
10.1109/ISQED.2015.7085447