Design and performance parameters of an ultra-low voltage, single supply 32bit processor implemented in 28nm FDSOI technology

Author

Clerc, S. ; Abouzeid, F. ; Patel, D.A. ; Daveau, J.-M. ; Bottoni, C. ; Ciampolini, L. ; Giner, F. ; Meyer, D. ; Wilson, R. ; Roche, P. ; Naudet, S. ; Virazel, A. ; Bosio, A. ; Girard, P.

Author_Institution

STMicroelectron., Crolles, France

fYear

2015

fDate

2-4 March 2015

Firstpage

366

Lastpage

370

Abstract

This work presents a single-supply SPARC 32b V8 microprocessor designed with Ultra Low Voltage (ULV) adapted standard cells and memories, aiming at low energy operation and stand by power. The microprocessor, equipped with 10 Transistors ULV bitcell 8KB SRAM cache, has been fabricated in Fully Depleted Silicon On Insulator (FDSOI) 28nm technology. A comparative analysis with similar implementations has been provided highlighting the performance gain and power savings that are achieved by our design methodology and implementation technology. Wafer-level tests showed that our ULV adapted microprocessor has an operating range that is functional down to 0.33V and that the ULV able cache can save from 30% to 62% energy.

Keywords

SRAM chips; cache storage; microprocessor chips; silicon-on-insulator; FDSOI technology; SPARC V8 microprocessor; SRAM cache; fully depleted silicon on insulator technology; low energy operation; size 28 nm; storage capacity 32 bit; storage capacity 8 Kbit; ultralow voltage; wafer-level tests; CMOS integrated circuits; Low voltage; Microprocessors; Registers; Standards; Transistors; Energy efficient Cache; FDSOI; RISC; ULV;

fLanguage

English

Publisher

ieee

Conference_Titel

Quality Electronic Design (ISQED), 2015 16th International Symposium on

Conference_Location

Santa Clara, CA

Print_ISBN

978-1-4799-7580-8

Type

conf

DOI

10.1109/ISQED.2015.7085453

Filename

7085453