Amorphous/crystalline silicon interface characterization by capacitance and conductance measurements

Author

Garcia-Hernansanz, R. ; Garcia-Hemme, E. ; Montero-Alvarez, D. ; del Prado, A. ; Martil, I. ; Gonzalez-Diaz, G. ; Olea, J.

Author_Institution

Dipt. Fis. Aplic. III, Univ. Complutense de Madrid, Madrid, Spain

fYear

2015

fDate

11-13 Feb. 2015

Firstpage

1

Lastpage

4

Abstract

We have deposited intrinsic amorphous silicon (a-Si:H) using the ECR-CVD (Electron Cyclotron Resonance Chemical Vapor Deposition) technique, and we have analyzed the interface between a-Si:H and crystalline silicon (c-Si). In order to obtain the a-Si:H/c-Si density of interface defects (D_it), we have followed the conductance method proposed by E. H. Nicollian and A. Goetzberger, normally applied to characterize MIS (Metal-Insulator-Semiconductor) structures. In this work we have considered that the intrinsic amorphous silicon behaves as an insulator for low bias. Values of the D_it lower than 10¹¹ cm^-1eV^-1 were obtained for our samples.

Keywords

MIS structures; amorphous semiconductors; capacitance; chemical vapour deposition; cyclotron resonance; electrical conductivity; elemental semiconductors; hydrogen; interface states; silicon; Si; Si:H-Si; amorphous-crystalline silicon interface characterization; capacitance measurements; conductance measurements; electron cyclotron resonance chemical vapor deposition; hydrogenated amorphous silicon; interface defect density; metal-insulator-semiconductor structures; Annealing; Atomic measurements; Capacitance; Frequency measurement; MIS devices; ECR-CVD; conductance and capacitance measurements; interface density of states; intrinsic hydrogenated amorphous silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices (CDE), 2015 10th Spanish Conference on

Conference_Location

Madrid

Type

conf

DOI

10.1109/CDE.2015.7087502

Filename

7087502