Title :
Thermal stability study of AlGaN/GaN MOS-HEMTs using Gd2O3 as gate dielectric
Author :
Gao, Z. ; Romero, M.F. ; Pampillon, M.A. ; San Andres, E. ; Calle, F.
Author_Institution :
Dept. Ing. Electron. & Inst. de Sist. Optoelectronicos y Microtecnologia, Univ. Politec. de Madrid, Madrid, Spain
Abstract :
Thermal stability of AlGaN/GaN MOS-HEMTs and -diodes using Gd2O3 are investigated by means of different thermal cycles and storage tests up to 500°C for one week. IV DC and pulsed characteristics of the devices before and after the processes are evaluated and compared with conventional HEMTs. Results show that the devices with Gd2O3 dielectric layer have lower leakage current and a more stable behavior during thermal treatment processes compared with conventional devices. In fact, an excellent on/off ratio of about 108 and a stable Vt is observed after storage at high temperature. The beneficial effects of Gd2O3 on trapping effects of MOS-HEMTs are also discussed.
Keywords :
III-V semiconductors; MOS integrated circuits; aluminium compounds; gadolinium compounds; gallium compounds; high electron mobility transistors; leakage currents; semiconductor device reliability; thermal management (packaging); thermal stability; wide band gap semiconductors; AlGaN-GaN; Gd2O3; MOS-HEMT; MOS-diodes; dielectric layer; gate dielectric; leakage current; storage tests; temperature 500 degC; thermal cycles; thermal stability; thermal treatment; Aluminum gallium nitride; Dielectrics; Gallium nitride; HEMTs; Logic gates; MODFETs; Thermal stability; AlGaN/GaN; Gd2O3; HEMTs; MOS-HEMTs; high-k dielectric; thermal stability;
Conference_Titel :
Electron Devices (CDE), 2015 10th Spanish Conference on
Conference_Location :
Madrid
DOI :
10.1109/CDE.2015.7087508
