• DocumentCode
    7034
  • Title

    160-GHz to 1-THz Multi-Color Active Imaging With a Lens-Coupled SiGe HBT Chip-Set

  • Author

    Statnikov, K. ; Grzyb, J. ; Heinemann, B. ; Pfeiffer, U.R.

  • Author_Institution
    Univ. of Wuppertal, Wuppertal, Germany
  • Volume
    63
  • Issue
    2
  • fYear
    2015
  • fDate
    Feb. 2015
  • Firstpage
    520
  • Lastpage
    532
  • Abstract
    This paper presents the concept and implementation of an active all-electronic terahertz multi-color imager with the functionality demonstrated in the frequency range of 160 GHz-1 THz. The proposed terahertz system is realized in the form of two independent highly integrated low-cost transmitter (Tx) and receiver (Rx) modules. Each module consists of a single silicon die with a silicon lens-coupled ultra-wideband on-chip antenna and is assembled onto a low-cost FR-4 printed circuit board using traditional wire-bonding. The chip-set is implemented in a 0.25 μm SiGe HBT BiCMOS process with fT/fmax of 280/435 GHz. The main Tx path is composed of an antenna-coupled harmonic generator and is driven by a × 9 multiplier chain fed from an external reference signal centered around 17-18 GHz. Four identical Tx paths are spatially combined on a single chip to increase the output power. The Rx chip shows a 2 × 2 arrangement of identical antenna-coupled broadband sub-harmonic mixers driven by a single × 9 multiplier chain; similar to that from the Tx circuit. The system operates simultaneously at six harmonics being multiple numbers of 165 GHz. The signal-to-noise ratio in transmission-mode active imaging with a 1-Hz resolution bandwidth is 90 dB for 165-GHz band, 115 dB for 330- and 495-GHz bands, 95 dB for 660- and 820-GHz bands, and 70 dB for 990-GHz band.
  • Keywords
    BiCMOS integrated circuits; MMIC mixers; assembling; elemental semiconductors; field effect MMIC; harmonic generation; heterojunction bipolar transistors; image colour analysis; image sensors; lead bonding; lens antennas; lenses; microwave antennas; microwave bipolar transistors; microwave field effect transistors; microwave generation; microwave imaging; printed circuits; silicon; submillimetre wave antennas; submillimetre wave generation; submillimetre wave imaging; submillimetre wave integrated circuits; submillimetre wave mixers; submillimetre wave receivers; submillimetre wave transistors; terahertz wave generation; terahertz wave imaging; ultra wideband antennas; Rx module; Si; SiGe; Tx module; active all-electronic terahertz multicolor active imager; antenna-coupled broadband subharmonic mixer; antenna-coupled harmonic generator; assembling; bandwidth 1 Hz; frequency 160 GHz to 1 THz; frequency 17 GHz to 18 GHz; gain 115 dB; gain 70 dB; gain 90 dB; gain 95 dB; lens-coupled HBT BiCMOS chip-set; lens-coupled ultrawideband on-chip antenna; low-cost FR-4 printed circuit board; receiver module; signal-to-noise ratio; size 0.25 mum; transmission-mode active imaging; transmitter module; wire-bonding; Antenna measurements; Antennas; Harmonic analysis; Imaging; Mixers; Noise; Silicon; Continuous wave (CW) terahertz active imaging; SiGe HBT technology; harmonic mixer; heterodyne system; lens-coupled on-chip antenna; multi-color imaging; multiplier-chain; terahertz spectroscopy;
  • fLanguage
    English
  • Journal_Title
    Microwave Theory and Techniques, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9480
  • Type

    jour

  • DOI
    10.1109/TMTT.2014.2385777
  • Filename
    7004075