DocumentCode :
70375
Title :
Compact BJT-Based Thermal Sensor for Processor Applications in a 14 nm tri-Gate CMOS Process
Author :
Oshita, Takao ; Shor, Joseph ; Duarte, David E. ; Kornfeld, Avner ; Zilberman, Dror
Author_Institution :
Intel Corp., Portland, OR, USA
Volume :
50
Issue :
3
fYear :
2015
fDate :
Mar-15
Firstpage :
799
Lastpage :
807
Abstract :
Compact thermal sensors (<; 0.02 mm 2 ) are important for measuring thermal gradients in microprocessors and can directly affect the processors performance and power management. In this paper, the first 14 nm thermal sensor is reported. This sensor was fabricated in Intel´s 14 nm process, and is one of the first analog circuits reported in this technology. It has an area of 0.0087 mm 2 , can sense at a speed > 50 kS/sec, consumes 1.1 mW with a resolution of 0.5 °C, and has a resolution FOM of 5.7 nJ * C 2 . It is very close to the present BJT sensor state-of-the-art in its size, while being much faster and having a much better FOM than any of the compact BJT sensors.
Keywords :
CMOS analogue integrated circuits; bipolar transistor circuits; microprocessor chips; temperature sensors; analog circuits; compact BJT-based thermal sensor; microprocessors; power 1.1 mW; power management; resolution FOM; size 14 nm; temperature 0.5 degC; thermal gradient measurement; tri-gate CMOS process; Modulation; Noise; Resistors; Temperature measurement; Temperature sensors; Transistors; Analog; microprocessors; thermal sensor;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2015.2396522
Filename :
7044613
Link To Document :
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