Title :
Salicidation Processes and CoSi2 Resistance Study
Author :
Lifang Xu ; Shafi, Alan ; Meldrim, Mark ; Zengtao Liu ; Yudong Kim ; Rangaraju, Nikhil
Author_Institution :
Micron Technol., Boise, ID, USA
Abstract :
The effect of multiple Si processes on the intrinsic sheet resistance of CoSi2 resistors is investigated in this article. It is discovered that CoSi2 intrinsic sheet resistance is not a simple function of the CoSi thickness, but rather depends on many other factors including CD related poly grain size, the mushroom effect, diffusion of As implant during silicidation anneal, and the existence of Ti-Under layer. The findings of this study provided an accurate and stable resistance control on Silicided poly resistor applications.
Keywords :
annealing; cobalt compounds; diffusion; electrical resistivity; grain size; ion implantation; resistors; semiconductor materials; semiconductor thin films; CoSi2; annealing; diffusion; intrinsic sheet resistance; mushroom effect; polygrain size; salicidation processes; titanium-underlayer; Annealing; Films; Implants; Resistance; Resistors; Silicides; Silicon;
Conference_Titel :
Microelectronics and Electron Devices (WMED), 2015 IEEE Workshop on
Conference_Location :
Boise, ID
Print_ISBN :
978-1-4799-7644-7
DOI :
10.1109/WMED.2015.7093687
