DocumentCode :
704672
Title :
Analysis and comparison of leakage power reduction techniques in CMOS circuits
Author :
Singhal, Smita ; Gaur, Nidhi ; Mehra, Anu ; Kumar, Pradeep
Author_Institution :
Dept. of ECE, Amity Univ., Noida, India
fYear :
2015
fDate :
19-20 Feb. 2015
Firstpage :
936
Lastpage :
944
Abstract :
This paper compares various leakage reduction techniques including Multi-threshold CMOS, Super-Cutoff CMOS, Zigzag, Stack Effect, Input Vector Control, LECTOR, Sleepy Stack, Sleepy Keeper, VCLEARIT, GALEOR, Dual Sleep, Sleepy-Pass Gate and Transistor Gating. The paper elaborately explores the working, comparison and analysis of all these techniques in different CMOS technologies. Leakage Power is analyzed during the standby mode of operation. It has been observed that for a particular circuit leakage depends on CMOS technology as well as leakage reduction technique. In this paper, wide range of results for leakage power reduction techniques of CMOS technologies from 180nm to 45nm is covered which will be helpful for further research in this area.
Keywords :
CMOS integrated circuits; leakage currents; GALEOR; LECTOR; VCLEARIT; circuit leakage; dual sleep; input vector control; leakage power reduction techniques; multi threshold CMOS circuits; size 180 nm to 45 nm; sleepy keeper; sleepy stack effect; sleepy-pass gate; super-cutoff CMOS circuits; transistor gating; CMOS integrated circuits; CMOS technology; Leakage currents; Logic gates; Switching circuits; Threshold voltage; Transistors; GALEOR and Sleepy Pass Gate; Leakage reduction; MTCMOS; SSCMOS; Sleep approach;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Signal Processing and Integrated Networks (SPIN), 2015 2nd International Conference on
Conference_Location :
Noida
Print_ISBN :
978-1-4799-5990-7
Type :
conf
DOI :
10.1109/SPIN.2015.7095351
Filename :
7095351
Link To Document :
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