DocumentCode :
70604
Title :
A CMOS 210-GHz Fundamental Transceiver With OOK Modulation
Author :
Zheng Wang ; Pei-Yuan Chiang ; Nazari, Peyman ; Chun-Cheng Wang ; Zhiming Chen ; Heydari, Payam
Author_Institution :
Nanoscale Commun. IC (NCIC) Labs., Univ. of California, Irvine, Irvine, CA, USA
Volume :
49
Issue :
3
fYear :
2014
fDate :
Mar-14
Firstpage :
564
Lastpage :
580
Abstract :
This paper presents a 210-GHz transceiver with OOK modulation in a 32-nm SOI CMOS process (fT/fmax= 250/320 GHz). The transmitter (TX) employs a 2 × 2 spatial combining array consisting of a double-stacked cross-coupled voltage controlled oscillator (VCO) at 210 GHz with an on-off-keying (OOK) modulator, a power amplifier (PA) driver, a novel balun-based differential power distribution network, four PAs, and an on-chip 2 × 2 dipole antenna array. The noncoherent receiver (RX) utilizes a direct detection architecture consisting of an on-chip antenna, a low-noise amplifier (LNA), and a power detector. The VCO generates measured -13.5-dBm output power, and the PA shows a measured 15-dB gain and 4.6-dBm Psat. The LNA exhibits a measured in-band gain of 18 dB and minimum in-band noise figure (NF) of 11 dB. The TX achieves an EIRP of 5.13 dBm at 10 dB back-off from saturated power. It achieves an estimated EIRP of 15.2 dBm when the PAs are fully driven. This is the first demonstration of a fundamental frequency CMOS transceiver at the 200-GHz frequency range.
Keywords :
CMOS integrated circuits; amplitude shift keying; dipole antenna arrays; field effect MIMIC; millimetre wave antenna arrays; modulators; radio transceivers; silicon-on-insulator; CMOS fundamental transceiver; LNA; OOK modulation; PA driver; SOI CMOS process; VCO; balun-based differential power distribution network; direct detection architecture; double-stacked cross-coupled voltage controlled oscillator; frequency 210 GHz; gain 15 dB; low-noise amplifier; minimum in-band noise figure; noncoherent receiver; on-chip dipole antenna array; on-off-keying modulator; power amplifier; power detector; size 32 nm; spatial combining array; Antenna arrays; Antenna radiation patterns; Arrays; Dipole antennas; Impedance matching; Substrates; System-on-chip; 200 GHz; $G$ -band; CMOS; fundamental transceiver (TRX); low-noise amplifier (LNA); millimeter-wave; on-chip antenna; power amplifier (PA); terahertz; voltage-controlled oscillator (VCO);
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2013.2297415
Filename :
6718086
Link To Document :
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