• DocumentCode
    707571
  • Title

    LVCMOS I/O standard based environment friendly low power ROM design on FPGA

  • Author

    Kalra, Lakshay ; Bansal, Neha ; Saini, Rishita ; Bansal, Meenakshi ; Pandey, Bishwajeet

  • Author_Institution
    Res. & Innovation Network, Chitkara Univ., Rajpura, India
  • fYear
    2015
  • fDate
    11-13 March 2015
  • Firstpage
    1824
  • Lastpage
    1829
  • Abstract
    LVCMOS is Low Voltage Complementary Metal Oxide Semiconductor. I/O standard is used to match the impedance of input line, output line, input port, output port and device in order to avoid transmission line reflection. Selection of energy efficient I/O standard is required to make energy efficient ROM. LVCMOS12 is the most optimal IO standard. Whereas, LVCMOS33 is the highest power consumer IO standard. With uniform frequency, there is no change in clock power and signal power but LVCMOS33 having 76.47%, 64.47%, 55.88%, 14.07% more I/O power consumption with respect to LVCMOS12, LVCMOS15, LVCMOS18, LVCMOS25, respectively. We can save up to 77% power using the energy efficient LVCMOS12 I/O standards. When, there is no demand of peak performance, then we can save 92.18% clock power, 100% signal power, and 75.75% I/O power by operating our device with 1GHz frequency in place of 4GHz using dynamic frequency scaling as power management techniques.
  • Keywords
    CMOS integrated circuits; clocks; field programmable gate arrays; low-power electronics; read-only storage; FPGA; LVCMOS IO standard; LVCMOS12 standards; LVCMOS15 standards; LVCMOS18 standards; LVCMOS25 standards; clock power; dynamic frequency scaling; frequency 1 GHz; low power ROM design; low voltage complementary metal oxide semiconductor; optimal IO standard; power management; signal power; Erbium; Magnetic resonance imaging; Yttrium; I/O standard; I/Os Power; Power Optimized Design; SSTL; Thermal Analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computing for Sustainable Global Development (INDIACom), 2015 2nd International Conference on
  • Conference_Location
    New Delhi
  • Print_ISBN
    978-9-3805-4415-1
  • Type

    conf

  • Filename
    7100561