• DocumentCode
    707745
  • Title

    Verification tests of 3.3 kV SiC (Silicon Carbide) hybrid IGBT inverter for Nishi-Nippon Railroad Co., Ltd 3000 series

  • Author

    Sugiyama, Akio ; Okitsu, Hiromi ; Ishimaru, Tomohiko ; Kishimoto, Yoshihisa ; Kadooka, Shohei ; Sawakami, Tomoki

  • Author_Institution
    Nishi-Nippon Railroad Co., Ltd., Fukuoka, Japan
  • fYear
    2015
  • fDate
    3-5 March 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Compared to a Si (Silicon) power device, an SiC (Silicon Carbide) power device is regarded as an indispensable power device for realizing the next generation power converter, because of its low switching loss, higher speed, and capability to operate at high temperatures. Toshiba developed an SiC hybrid IGBT (Insulated gate type bipolar transistor) with a withstand voltage of 3.3 kV for 1,500 V DC catenary systems [1] [2]. This is applied to the traction inverter of Nishi-Nippon Railroad Co., Ltd.´s 3000 Series train cars. By utilizing the reduced switching loss characteristic of SiC hybrid IGBT, improvements in the inverter output current and carrier frequency of PWM control are now possible while retaining the performance of a conventional inverter cooler. With the purpose of conserving energy, this paper introduces the development and verification test results of the traction control focusing on: (1) Enhancing regenerative brake force in high speed region (2) Reducing motor harmonics loss by multi-pulsing of PWM control.
  • Keywords
    PWM invertors; insulated gate bipolar transistors; power bipolar transistors; regenerative braking; silicon compounds; traction motors; wide band gap semiconductors; DC catenary system; PWM control; SiC; carrier frequency; high speed region; insulated gate type bipolar transistor; inverter cooler; inverter output current; motor harmonics loss; regenerative brake force; silicon carbide hybrid IGBT inverter; silicon carbide power device; traction control; traction inverter; verification tests; voltage 1500 V; voltage 3.3 kV; Decision support systems; IGBT(Insulated gate type bipolar transistor); Inverter; SiC (Sillicon Carbide); Verification;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles (ESARS), 2015 International Conference on
  • Conference_Location
    Aachen
  • Type

    conf

  • DOI
    10.1109/ESARS.2015.7101517
  • Filename
    7101517