10kV SiC MOSFETs versus 6.5kV Si-IGBTs for medium frequency transformer application in railway traction

Author

Casarin, J. ; Ladoux, P. ; Lasserre, P.

Author_Institution

LAPLACE (Lab. Plasma et Conversion d´Energie), Univ. de Toulouse - INPT, Toulouse, France

fYear

2015

fDate

3-5 March 2015

Firstpage

1

Lastpage

6

Abstract

Nowadays, AC single phase power supply is widely used in railway electrification. To step down the input voltage, rail vehicles should board a heavy and bulky transformer. In recent years, several multilevel topologies including medium frequency transformers were proposed to replace the low frequency input transformer. The objective is to reduce weight and volume on the traction drive while increasing the efficiency. This paper focuses on the series-resonant DC/DC converter which is used in a well-known indirect structure. An opposition-method test bench allows to operate in rated conditions and hybrid power modules using 10 kV Silicon Carbide MOSFETs are compared to classical 6.5 kV Si IGBTs modules.

Keywords

DC-DC power convertors; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; power supply circuits; power transformers; railway electrification; resonant power convertors; semiconductor device testing; silicon compounds; traction motor drives; wide band gap semiconductors; AC single phase power supply; IGBT; MOSFET; Si; SiC; hybrid power modules; medium frequency transformer; opposition-method test bench; rail vehicles; railway electrification; railway traction; series-resonant DC-DC converter; silicon carbide; traction drive; voltage 10 kV; voltage 6.5 kV; DC/DC power converter; Rail transportation; Silicon Carbide; medium frequency transformer; traction drive;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles (ESARS), 2015 International Conference on

Conference_Location

Aachen

Type

conf

DOI

10.1109/ESARS.2015.7101518

Filename

7101518