Ohmic and rectifying contacts for ultraviolet photodiode based on AlGaN solid solutions

Author

Andreev, M.Y. ; Lamkin, I.A. ; Tarasov, S.A. ; Mikhailov, I.I. ; Solomonov, A.V.

Author_Institution

Dept. of Micro- & Nanoelectron., St. Petersburg Electrotech. Univ. LETI, St. Petersburg, Russia

fYear

2015

fDate

2-4 Feb. 2015

Firstpage

13

Lastpage

16

Abstract

A technology of Ti/Al contacts using thermal vacuum evaporation and further annealing in vacuum wasproposed. Contacts for Si-doped Al_xGa_1-xN epitaxial layers (x = 0.08 - 0.7, n = 1.7 · 10¹⁹ cm^-3) were fabricated and investigated. The Si-doped epitaxial layers were grown by plasma-assisted MBE and HVPE (x = 0.1, n = 10¹⁶ - 10¹⁹) on c-sapphire substrates. The contact resistance of 8 · 10^-5 Ω· cm² was achieved for the Al_0.5Ga_0.5N sample. Auger electron spectroscopy was used to study redistribution of metal atoms after annealing.

Keywords

Auger electron spectroscopy; III-V semiconductors; Schottky barriers; aluminium compounds; annealing; contact resistance; elemental semiconductors; evaporation; gallium compounds; molecular beam epitaxial growth; ohmic contacts; photodiodes; silicon; solid solutions; Al_0.5Ga_0.5N; Al_xGa_1-xN; Auger electron spectroscopy; HVPE; Si; Ti-Al; annealing; c-sapphire substrates; contact resistance; metal atom redistribution; ohmic contacts; plasma-assisted MBE; rectifying contacts; silicon-doped epitaxial layers; solid solutions; thermal vacuum evaporation; titanium-aluminium contacts; ultraviolet photodiode; Annealing; Epitaxial layers; Heating; Light emitting diodes; Nickel; Plasma temperature; AlGaN; Ohmic contacts; Schottky barriers;

fLanguage

English

Publisher

ieee

Conference_Titel

Young Researchers in Electrical and Electronic Engineering Conference (EIConRusNW), 2015 IEEE NW Russia

Conference_Location

St. Petersburg

Print_ISBN

978-1-4799-7305-7

Type

conf

DOI

10.1109/EIConRusNW.2015.7102221

Filename

7102221